I-GaP


  • Ubume beCrystal:Zinc Blende
  • Iqela lolingano:Td2-F43m
  • Inani leathom kwi-1 cm3:4.94·1022
  • I-Auger recombination coefficient:10-30 cm6/s
  • Ubushushu beDebye:445 K
  • Iinkcukacha zeMveliso

    IiParameters zobuGcisa

    Ikristale ye-Gallium phosphide (i-GaP) yi-infrared optical material enobunzima bomphezulu olungileyo, i-thermal conductivity ephezulu kunye nokuhanjiswa kwebhendi ebanzi.Ngenxa yobuchule bayo obugqibeleleyo bokubona, oomatshini kunye nepropathi eshushu, iikristale ze-GaP zinokusetyenziswa emkhosini nakweminye intsimi yorhwebo oluphezulu.

    Iipropati ezisisiseko

    Ubume beCrystal Zinc Blende
    Iqela le-symmetry Td2-F43m
    Inani le-athomu kwi-1 cm3 4.94·1022
    I-Auger recombination coefficient 10-30i-cm6/s
    Ubushushu beDebye 445 K
    Ukuxinana 4.14 g cm-3
    Idielectric engagungqiyo (static) 11.1
    I-Dielectric constant (i-frequency ephezulu) 9.11
    Ubunzima be-electron obusebenzayoml 1.12mo
    Ubunzima be-electron obusebenzayomt 0.22mo
    Ubuninzi bomngxuma obusebenzayomh 0.79mo
    Ubuninzi bomngxuma obusebenzayomlp 0.14mo
    Ubudlelwane be-electron 3.8 eV
    I-Lattice rhoqo 5.4505 A
    Amandla ephonon optical 0.051

     

    Iiparamitha zobugcisa

    Ukutyeba kwecandelo ngalinye 0.002 kunye ne-3 +/-10% mm
    Ukuqhelaniswa 110 - 110
    Umgangatho womphezulu scr-dig 40-20 - 40-20
    Ukucaba amaza kwi-633 nm-1
    Ukufana arc min <3