Nd:YVO4 yeyona crystal isebenzayo yelaser yokumpompa idiode phakathi kweekristale zelaser zangoku zorhwebo, ngakumbi, kuxinzelelo lwamandla asezantsi ukuya phakathi.Oku ikakhulu kukufunxwa kunye neempawu zokukhupha ezogqitha i-Nd:YAG.Ipumped by laser diodes, Nd:YVO4 crystal idityaniswe neNLO coefficient crystals (LBO, BBO, or KTP) to frequency-shift output from the near infrared to green, blue, or even UV.Oku kudityaniswa ukwakha zonke ii-laser zombuso oqinileyo sisixhobo selaser esifanelekileyo esinokugubungela ezona zicelo zixhaphakileyo zelases, kubandakanya ukwenziwa kwemishini, ukusetyenzwa kwezinto, i-spectroscopy, ukuhlolwa kwe-wafer, imiboniso yokukhanya, ukuxilongwa kwezonyango, ushicilelo lwelaser, kunye nokugcinwa kwedatha, njl. kubonisiwe ukuba i-Nd: i-YVO4 esekelwe kwi-diode epompelwe i-laser yombuso oqinileyo ithatha ngokukhawuleza iimarike ngokuqhelekileyo ezilawulwa yi-ion lasers epholileyo yamanzi kunye ne-laser-pumped lasers, ngakumbi xa i-compact design kunye ne-single-longitudinal-mode output ifunwa.
Nd:Izinto ezilungileyo zeYVO4 ngaphezulu kwe-Nd:YAG:
• Ukufunxa ngokuphezulu ngokuphindwe kahlanu ngaphezulu komda wokumpompa obanzi malunga ne-808 nm (ngoko ke, ukuxhomekeka ekumpompeni ubude bamaza kusezantsi kakhulu kunye notyekelo olomeleleyo kwimveliso yendlela enye);
• Ubukhulu ngokuphindwe kathathu ubukhulu obuvuselelweyo obunqamlezileyo kumgama ojikelezayo we-1064nm;
• Umyinge wokusika osezantsi kunye nempumelelo ephezulu yethambeka;
• Njengekristale ye-uniaxial ene-birefringence enkulu, ukukhutshwa kwe-polarized kuphela.
Iinkcazelo ngeLaser ye-Nd:YVO4:
• Olona phawu lunomtsalane lwe-Nd:YVO4, xa kuthelekiswa ne-Nd:YAG, i-coefficient yayo yokufunxa ngokuphindwe ka-5 kumda obanzi wokufunxa ojikeleze i-808nm peak pump wavelength, ehambelana nje nomgangatho wamandla aphezulu e-laser diode akhoyo ngoku.Oku kuthetha ikristale encinci engasetyenziselwa i-laser, ekhokelela kwinkqubo ye-laser ehlangeneyo.Kumandla okukhutshwayo anikiweyo, oku kukwathetha inqanaba lamandla elisezantsi apho i-laser diode isebenza khona, ngaloo ndlela yandisa ubomi be-laser diode ebiza kakhulu.I-bandwidth yokufunxa ebanzi ye-Nd: YVO4 enokufikelela kwi-2.4 ukuya kwi-6.3 amaxesha e-Nd: YAG.Ngaphandle kokumpompa okusebenzayo ngakumbi, kukwathetha uluhlu olubanzi lokhetho lweenkcazo zediode.Oku kuya kuba luncedo kubenzi benkqubo ye-laser ukunyamezela okubanzi ekukhetheni ixabiso eliphantsi.
• I-Nd: YVO4 crystal inee-cross-sections ezinkulu ezivuselelweyo zokukhutshwa, zombini kwi-1064nm kunye ne-1342nm.Xa i-a-axis inqunyulwe i-Nd: i-YVO4 i-crystal lasing kwi-1064m, imalunga namaxesha e-4 aphezulu kunaleyo ye-Nd: YAG, ngelixa i-1340nm i-cross-section evuselelweyo yi-18 amaxesha amakhulu, okukhokelela ekusebenzeni kwe-CW kugqwesa ngokupheleleyo Nd: YAG. kwi1320nm.Ezi zenza i-Nd: YVO4 laser ibe lula ukugcina ukukhutshwa komgca omnye olomeleleyo kumaza amabini.
• Olunye uphawu olubalulekileyo lwe-Nd: YVO4 lasers kukuba, ngenxa yokuba i-uniaxial kunokuba i-symmetry ephezulu ye-cubic njenge-Nd: YAG, ikhupha kuphela i-laser e-linearly polarized, ngaloo ndlela inqanda iziphumo ezingafunekiyo ze-birefringent kwi-conversion frequency.Nangona ubomi be-Nd:YVO4 bufutshane ngokuphindwe nge-2.7 kunobo be-Nd:YAG, ukusebenza kakuhle kwayo kwithambeka kusesephezulu kakhulu kuyilo olululo lwe-laser cavity, ngenxa yokusebenza kwayo komyinge wempompo ephezulu.
Ukuxinana kweAtom | 1.26×1020 iiathom/cm3 (Nd1.0%) |
IParameter yeSkhiwo seCell | Zircon Tetragonal, iqela indawo D4h-I4 / amd a=b=7.1193Å,c=6.2892Å |
Ukuxinana | 4.22g/cm3 |
Mohs Ubunzima | 4-5 (njengeglasi) |
I-Coefficient yoKwandiswa kweThermal(300K) | αa=4.43×10-6/K αc=11.37×10-6/K |
I-Thermal Conductivity Coefficient(300K) | ∥C:0.0523W/cm/K ⊥C:0.0510W/cm/K |
Ubude bexesha elide | 1064nm,1342nm |
I-coefficient ye-Thermal optical(300K) | dno/dT=8.5×10-6/K dne/dT=2.9×10-6/K |
Ukukhutshwa kwe-cross-section evuselelweyo | 25×10-19cm2 @ 1064nm |
Ubomi beFluorescent | 90μs(1%) |
I-coefficient yokufunxa | 31.4cm-1 @810nm |
Ilahleko yangaphakathi | 0.02cm-1 @1064nm |
Fumana i-bandwidth | 0.96nm@1064nm |
Ukukhutshwa kwe-laser yepolarized | i-polarization;ihambelana nomgca we-optical (c-axis) |
I-Diode impompo ye-optical ukuya kwi-optical ukusebenza kakuhle | >60% |
Iiparamitha zobuGcisa:
Chamfer | < λ/4 @ 633nm |
Ukunyamezelwa komgangatho | (W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm)(L<2.5mm)(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm)(L>2.5mm) |
Umngxuma ocacileyo | Embindini 95% |
Ukucaba | λ/8 @ 633 nm, λ/4 @ 633nm(ukubetha ngaphantsi kwe-2mm) |
Umgangatho womphezulu | 10/5 Scratch / Dig nge-MIL-O-1380A |
Ukufana | ngcono kune 20 arc imizuzwana |
Perpendicularity | Perpendicularity |
Chamfer | 0.15x45deg |
Ukwaleka | 1064nm,R<0.2%;HR Coating:1064nm,R>99.8%,808nm,T>95% |